Earlier in November, Qualcomm announced the Snapdragon 835, its newest flagship SoC for smartphone devices. The Snapdragon 835 chip which is will be reportedly manufactured by Samsung on a 10nm FinFET process, is expected to be better than its predecessors in terms of, performance and top delivery.
Qualcomm, even though did not provide as much detail as expected during its November announcement, the company has made its final decision to put the Snapdragon 835 “into focus,” at the CES event due to take place on the 3rd January 2017.
As reports would have it, the Snapdragon 835 SoC which will be based on the new 10nm process, should automatically result in lower power consumption and better performance as well. Qualcomm also made it clear that the Snapdragon 835 will be able to deliver up to 27 percent higher performance as well as drawing up to 40 percent less power when compared to its previous variants including the Snapdragon 820 and 821 that were both based on a 14nm process.
What’s more, the Snapdragon 835 will also support the new Quick Charge 4.0 feature, which has been promised by Qualcomm to deliver up to 5 hours of battery life in just 5 minutes of charging time. The also went ahead to claim that a typical smartphone battery will charge up to 50 percent in just 15 minutes.
According to more reports, the Snapdragon 835 chip will also feature an octa-core processor clocked at 2.2GHz.
According to one online test, it reportedly discovered that the new Adreno 540 GPU scored about 30 percent higher than the previous one in Snapdragon 821. Nevertheless, the clock speed and GPU are yet to be confirmed by the company.
The upcoming next generation flagships including the Samsung Galaxy S8 and LG G6 flagships are likely to be the first to feature Qualcomm’s latest SoC in 2017.
As of now, this is all the information we have regarding Qualcomm’s Snapdragon 835 set to unveil in the first quarter of next year.